Determining the internal quantum efficiency of organic Bulk Heterojunctions based on mono and bisadduct fullerenes as acceptor

H. Azimi, M. Morana, T. Ameri, B. Dastmalchi, M. Scharber, K. Hingerl, C.J. Brabec

Research output: Contribution to journalArticlepeer-review

Abstract

With the aid of optical modeling, the internal quantum efficiencies of organic Bulk Heterojunction (oBHJ) photovoltaic devices based on low band gap polymer of poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d] silole)-2,6-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5, 5′-diyl] (Si-PCPDTBT) blended with the acceptors of 1-(3-Methoxycarbonyl) propyl-1-phenyl [6,6] C61 (PCBM) and bisadduct (bisPCBM) are determined. The Si-PCPDTBT:bisPCBM devices show considerably lower short circuit current density (Jsc) as compared to the Si-PCPDTBT:PCBM devices. The results show that 30% of this smaller Jsc is due to the lower optical absorption of bisPCBM, while the major losses originate from the electrical losses. It is found that for the best Si-PCPDTBT:bisPCBM devices with an active layer thickness in the range of 70100 nm, the inefficient charge generation within the bisPCBM domains is the major contribution to the whole losses. Increasing the active layer thickness of Si-PCPDTBT:bisPCBM device significantly enhances recombination losses in polymer/bisfullerene matrix. © 2011 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)3093-3098
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume95
Issue number11
DOIs
Publication statusPublished - 2011

Keywords

  • 1
  • 3-benzothiadiazole
  • Active Layer
  • Bis-adducts
  • Bulk heterojunction
  • Charge generation
  • Electrical loss
  • Internal quantum efficiency
  • Low bandgap polymers
  • matrix
  • Optical modeling
  • Organic solar cell
  • Photovoltaic devices
  • Recombination
  • Recombination loss
  • Efficiency
  • Fullerenes
  • Heterojunctions
  • Loss prevention
  • Photovoltaic effects
  • Silicon
  • Quantum efficiency

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