Abstract / Description of output
The standard approach to generate the data required for automated proximity correction is to measure a set of patterned features using an optical tool or a critical dimension scanning electron microscope (CD-SEM). This paper describes the design of a set of on-mask electrical test structures to perform the same task which has a number of attractions. The electrical test structures are based on the Kelvin bridge resistor to measure the widths of isolated and densely packed lines and spaces. The results from these measurements can be used to extract information about proximity effects in the mask making process and to generate rules or models for the correction of mask designs. Electrical results from a test mask, fabricated without any correction for e-beam proximity effects, are presented and compared with optical measurements of the same structures made with an industry standard mask metrology tool.
| Original language | English |
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| Title of host publication | 2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS |
| Place of Publication | NEW YORK |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 171-176 |
| Number of pages | 6 |
| ISBN (Print) | 978-1-4244-0780-4 |
| Publication status | Published - 2007 |
| Event | IEEE International Conference on Microelectronic Test Structures - Tokyo Duration: 19 Mar 2007 → 22 Mar 2007 |
Conference
| Conference | IEEE International Conference on Microelectronic Test Structures |
|---|---|
| City | Tokyo |
| Period | 19/03/07 → 22/03/07 |