Abstract
We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal–oxide–semiconductor transistor-based drivers for faster modulation.
Original language | English |
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Title of host publication | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 71-72 |
Number of pages | 2 |
Volume | 2017-January |
ISBN (Electronic) | 9781509065783 |
DOIs | |
Publication status | Published - 23 Nov 2017 |
Event | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States Duration: 1 Oct 2017 → 5 Oct 2017 |
Conference
Conference | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 |
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Country/Territory | United States |
City | Lake Buena Vista |
Period | 1/10/17 → 5/10/17 |