Dielectric screening in atomically thin boron nitride nanosheets

L.H. Li, E.J.G. Santos, T. Xing, E. Cappelluti, R. Roldán, Y. Chen, K. Watanabe, T. Taniguchi

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas–Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.
Original languageEnglish
JournalNano Letters
Publication statusPublished - 14 Jan 2015


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