Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices

H. Lin; Tom Stevenson; A. M. Gundlach; Camelia Dunare; Anthony Walton

doi:10.1016/j.mee.2008.01.054

Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices

H. Lin, Tom Stevenson, A. M. Gundlach, Camelia Dunare, Anthony Walton

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper investigates the feasibility of direct Al-Al contact using low temperature wafer bonding process for the integration of MEMS and CMOS devices. Sufficient mechanical strength oxide-oxide bonds can be achieved using an oxygen plasma assisted low temperature wafer bonding process, with Al structures present on the bonding surface. An average contact resistance of 2.6 x 10(-8) Omega cm(2) was measured from single contact test structures, indicating that the establishment of direct Al-Al interconnect during the bond anneal step is possible. (C) 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1059-1061
Number of pages	3
Journal	Microelectronic Engineering
Volume	85
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mee.2008.01.054
Publication status	Published - 2008

Keywords / Materials (for Non-textual outputs)

CMOS-MEMS integration
Al interconnect
plasma assisted wafer bonding

Access to Document

10.1016/j.mee.2008.01.054

Cite this

@article{319a96bd8a5949cf82b86d607bf413fe,

title = "Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices",

abstract = "This paper investigates the feasibility of direct Al-Al contact using low temperature wafer bonding process for the integration of MEMS and CMOS devices. Sufficient mechanical strength oxide-oxide bonds can be achieved using an oxygen plasma assisted low temperature wafer bonding process, with Al structures present on the bonding surface. An average contact resistance of 2.6 x 10(-8) Omega cm(2) was measured from single contact test structures, indicating that the establishment of direct Al-Al interconnect during the bond anneal step is possible. (C) 2008 Elsevier B.V. All rights reserved.",

keywords = "CMOS-MEMS integration, Al interconnect, plasma assisted wafer bonding",

author = "H. Lin and Tom Stevenson and Gundlach, {A. M.} and Camelia Dunare and Anthony Walton",

year = "2008",

doi = "10.1016/j.mee.2008.01.054",

language = "English",

volume = "85",

pages = "1059--1061",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "5-6",

}

TY - JOUR

T1 - Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices

AU - Lin, H.

AU - Stevenson, Tom

AU - Gundlach, A. M.

AU - Dunare, Camelia

AU - Walton, Anthony

PY - 2008

Y1 - 2008

N2 - This paper investigates the feasibility of direct Al-Al contact using low temperature wafer bonding process for the integration of MEMS and CMOS devices. Sufficient mechanical strength oxide-oxide bonds can be achieved using an oxygen plasma assisted low temperature wafer bonding process, with Al structures present on the bonding surface. An average contact resistance of 2.6 x 10(-8) Omega cm(2) was measured from single contact test structures, indicating that the establishment of direct Al-Al interconnect during the bond anneal step is possible. (C) 2008 Elsevier B.V. All rights reserved.

AB - This paper investigates the feasibility of direct Al-Al contact using low temperature wafer bonding process for the integration of MEMS and CMOS devices. Sufficient mechanical strength oxide-oxide bonds can be achieved using an oxygen plasma assisted low temperature wafer bonding process, with Al structures present on the bonding surface. An average contact resistance of 2.6 x 10(-8) Omega cm(2) was measured from single contact test structures, indicating that the establishment of direct Al-Al interconnect during the bond anneal step is possible. (C) 2008 Elsevier B.V. All rights reserved.

KW - CMOS-MEMS integration

KW - Al interconnect

KW - plasma assisted wafer bonding

U2 - 10.1016/j.mee.2008.01.054

DO - 10.1016/j.mee.2008.01.054

M3 - Article

SN - 0167-9317

VL - 85

SP - 1059

EP - 1061

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5-6

ER -

Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices

Abstract

Keywords / Materials (for Non-textual outputs)

Access to Document

Fingerprint

Cite this