Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

J. Park; J. Ho; H. Yun; M. Park; J.H. Lee; M. Seo; Eleanor E.B. Campbell; C. Lee; S. Pyo; SangWook Lee

doi:10.1007/s00339-012-7411-7

Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

J. Park, J. Ho, H. Yun, M. Park, J.H. Lee, M. Seo, Eleanor E.B. Campbell, C. Lee, S. Pyo, SangWook Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

Original language	English
Pages (from-to)	1051-1056
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	111
Issue number	4
Early online date	16 Nov 2012
DOIs	https://doi.org/10.1007/s00339-012-7411-7
Publication status	Published - Jun 2013

Keywords

organic semiconductor
nanoelectrode fabrication

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10.1007/s00339-012-7411-7

Direct top–down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists
Copyright © 2012 Springer-Verlag Berlin Heidelberg. All rights reserved.
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http://link.springer.com/article/10.1007%2Fs00339-012-7411-7

Cite this

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title = "Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists",

abstract = "We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.",

keywords = "organic semiconductor, nanoelectrode fabrication",

author = "J. Park and J. Ho and H. Yun and M. Park and J.H. Lee and M. Seo and Campbell, {Eleanor E.B.} and C. Lee and S. Pyo and SangWook Lee",

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AU - Park, J.

AU - Ho, J.

AU - Yun, H.

AU - Park, M.

AU - Lee, J.H.

AU - Seo, M.

AU - Campbell, Eleanor E.B.

AU - Lee, C.

AU - Pyo, S.

AU - Lee, SangWook

PY - 2013/6

Y1 - 2013/6

N2 - We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

AB - We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

KW - organic semiconductor

KW - nanoelectrode fabrication

U2 - 10.1007/s00339-012-7411-7

DO - 10.1007/s00339-012-7411-7

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EP - 1056

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 4

ER -

Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

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