Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

J. Park, J. Ho, H. Yun, M. Park, J.H. Lee, M. Seo, Eleanor E.B. Campbell, C. Lee, S. Pyo, SangWook Lee

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.
Original languageEnglish
Pages (from-to)1051-1056
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume111
Issue number4
Early online date16 Nov 2012
DOIs
Publication statusPublished - Jun 2013

Keywords / Materials (for Non-textual outputs)

  • organic semiconductor
  • nanoelectrode fabrication

Fingerprint

Dive into the research topics of 'Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists'. Together they form a unique fingerprint.

Cite this