Dry etching of SiC in inductively coupled Cl2/Ar plasma

L. Jiang, N. O. V. Plank, Rebecca Cheung, M. A. Blauw, E. van der Drift

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied.
The SiC etch rate has been investigated as a function of average ion energy,
Ar concentration in the gas mixtures, inductively coupled plasma power,
work pressure and substrate temperature. The etch mechanism has been
investigated by correlating the ion current density and relative atomic
chlorine content to the etch rate under various etch conditions. For the first
time, it has been found that the etch rate of SiC increases by about 50% at
lower substrate temperatures (−80˚C) than at high substrate temperatures
(150˚C) with the highest SiC etch rate of 230 nm min−1
being achieved at a
substrate temperature of −80˚C.
Original languageEnglish
Pages (from-to)1809-1814
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume2004
Issue number37
Publication statusPublished - 2004

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