Effect of mobile ionic-charge on CMOS based Ion-Sensitive Field-Effect Transistors (ISFETs)

T. Prodromakis*, P. Georgiou, K. Michelakis, C. Toumazou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work is an investigation on the large threshold voltage variation exhibited in CMOS based ISFETs. This irregularity is thoroughly examined and is identified to be caused by mobile ionic charge that is induced in the sensing membrane when the membrane is in contact with the ionic-solution. This auxiliary charge increments the effective capacitance of the sensing membrane, causing irregular shifts in the characteristics of the devices. Several methods for overcoming this issue are addressed.

Original languageEnglish
Title of host publication2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Pages2165-2168
Number of pages4
DOIs
Publication statusPublished - 26 Jun 2009
Event2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan, Province of China
Duration: 24 May 200927 May 2009

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Country/TerritoryTaiwan, Province of China
CityTaipei
Period24/05/0927/05/09

Keywords / Materials (for Non-textual outputs)

  • Chemical sensor
  • CMOS
  • Drift
  • ISFET
  • Mobile ionic charge
  • Threshold variation
  • Trapped charge

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