Effects of Reactive ion etching on the electrical characteristics of GaN

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	3467-3470
Number of pages	4
Journal	Journal of Vacuum Science and Technology B
Volume	B 18
Publication status	Published - 2000

Cite this

@article{82d005dcc66141ebb0cd5febe4ae1418,

title = "Effects of Reactive ion etching on the electrical characteristics of GaN",

author = "B. Rong and Rebecca Cheung and W. Gao and Alkaisi, \{M. M.\} and Reeves, \{R. J.\}",

year = "2000",

language = "Undefined/Unknown",

volume = "B 18",

pages = "3467--3470",

journal = "Journal of Vacuum Science and Technology B",

issn = "1520-8567",

publisher = "AVS Science and Technology Society",

}

TY - JOUR

T1 - Effects of Reactive ion etching on the electrical characteristics of GaN

AU - Rong, B.

AU - Cheung, Rebecca

AU - Gao, W.

AU - Alkaisi, M. M.

AU - Reeves, R. J.

PY - 2000

Y1 - 2000

M3 - Article

SN - 1520-8567

SN - 2166-2754

VL - B 18

SP - 3467

EP - 3470

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

ER -