Electrical CD characterisation of binary and alternating aperture phase shifting masks

S Smith, M McCallum, A J Walton, Tom Stevenson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

the recent advances in optical lithography have been driven by the utilisation of complex photomasks; using Optical Proximity Correction (OPC) or phase shifting technologies. These masks are difficult and expensive to manufacture so the ability to test and characterise the mask making process is very important. This paper examines the issues involved in the use of relatively low cost Electrical Critical Dimension (ECD) measurement of mask features. Modified cross-bridge test structures have been designed to allow the on-mask measurement of dense and isolated, binary and phase shifted layouts. The results of electrical and Critical Dimension Scanning Electron Microscope (CD-SEM) testing of these structures are presented and indicate the lower variability associated with ECD measurements. In particular the adverse effect of phase shifting elements on the accuracy of SEM measurements is highlighted.

Original languageEnglish
Title of host publicationICMTS 2002:PROCEEDINGS OF THE 2002 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages712
Number of pages6
ISBN (Print)0-7803-7464-9
Publication statusPublished - 2002
Event15th International Conference on Microelectronic Test Structures - CORK
Duration: 8 Apr 200211 Apr 2002

Conference

Conference15th International Conference on Microelectronic Test Structures
CityCORK
Period8/04/0211/04/02

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