Electrical conductivity of xenon at megabar pressures

MI Eremets; EA Gregoryanz; VV Struzhkin; HK Mao; RJ Hemley; N Mulders; NM Zimmerman

Electrical conductivity of xenon at megabar pressures

MI Eremets^*, EA Gregoryanz, VV Struzhkin, HK Mao, RJ Hemley, N Mulders, NM Zimmerman

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

The electrical transport properties of solid xenon were directly measured at pressures up to 155 GPa and temperatures from 300 K to 27 mK. The temperature dependence of resistance changed from semiconducting to metallic at pressures between 121 and 138 GPa, revealing direct proof of metallization of a rare-gas solid by electrical transport measurements. Anomalies in the conductivity are observed at low temperatures in the vicinity of the transition such that purely metallic behavior is observed only at 155 GPa over the entire temperature range.

Original language	English
Pages (from-to)	2797-2800
Number of pages	4
Journal	Physical Review Letters
Volume	85
Issue number	13
Publication status	Published - 25 Sept 2000

Keywords / Materials (for Non-textual outputs)

INSULATOR-METAL TRANSITION
SOLID XENON
OPTICAL-ABSORPTION
X-RAY
METALLIZATION

Cite this

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title = "Electrical conductivity of xenon at megabar pressures",

abstract = "The electrical transport properties of solid xenon were directly measured at pressures up to 155 GPa and temperatures from 300 K to 27 mK. The temperature dependence of resistance changed from semiconducting to metallic at pressures between 121 and 138 GPa, revealing direct proof of metallization of a rare-gas solid by electrical transport measurements. Anomalies in the conductivity are observed at low temperatures in the vicinity of the transition such that purely metallic behavior is observed only at 155 GPa over the entire temperature range.",

keywords = "INSULATOR-METAL TRANSITION, SOLID XENON, OPTICAL-ABSORPTION, X-RAY, METALLIZATION",

author = "MI Eremets and EA Gregoryanz and VV Struzhkin and HK Mao and RJ Hemley and N Mulders and NM Zimmerman",

year = "2000",

month = sep,

day = "25",

language = "English",

volume = "85",

pages = "2797--2800",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "13",

}

TY - JOUR

T1 - Electrical conductivity of xenon at megabar pressures

AU - Eremets, MI

AU - Gregoryanz, EA

AU - Struzhkin, VV

AU - Mao, HK

AU - Hemley, RJ

AU - Mulders, N

AU - Zimmerman, NM

PY - 2000/9/25

Y1 - 2000/9/25

N2 - The electrical transport properties of solid xenon were directly measured at pressures up to 155 GPa and temperatures from 300 K to 27 mK. The temperature dependence of resistance changed from semiconducting to metallic at pressures between 121 and 138 GPa, revealing direct proof of metallization of a rare-gas solid by electrical transport measurements. Anomalies in the conductivity are observed at low temperatures in the vicinity of the transition such that purely metallic behavior is observed only at 155 GPa over the entire temperature range.

AB - The electrical transport properties of solid xenon were directly measured at pressures up to 155 GPa and temperatures from 300 K to 27 mK. The temperature dependence of resistance changed from semiconducting to metallic at pressures between 121 and 138 GPa, revealing direct proof of metallization of a rare-gas solid by electrical transport measurements. Anomalies in the conductivity are observed at low temperatures in the vicinity of the transition such that purely metallic behavior is observed only at 155 GPa over the entire temperature range.

KW - INSULATOR-METAL TRANSITION

KW - SOLID XENON

KW - OPTICAL-ABSORPTION

KW - X-RAY

KW - METALLIZATION

M3 - Article

SN - 0031-9007

VL - 85

SP - 2797

EP - 2800

JO - Physical Review Letters

JF - Physical Review Letters

IS - 13

ER -

Electrical conductivity of xenon at megabar pressures

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

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