Abstract / Description of output
Electrical test structures have been designed to enable the characterisation of corner serif forms of optical proximity correction. These structures measure the resistance of a conducting track with a right angled corner. Varying amounts of OPC have been applied to the outer and inner corners of the feature and the effect on the resistance of the track investigated. A prototype test mask has been fabricated which contains test structures suitable for on-mask electrical measurement. The same mask was used to print the structures using an i-line lithography tool for on-wafer characterisation. Results from the structures at wafer level have shown that OPC has an impact on the final printed features. In particular the level of corner rounding is dependent upon the dimensions of the OPC features employed and the measured resistance can be used to help quantify the level of aggressiveness of the inner corner serifs.
Original language | English |
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Title of host publication | ICMTS 2009: 2009 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES |
Place of Publication | NEW YORK |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 162-167 |
Number of pages | 6 |
ISBN (Print) | 978-1-4244-4259-1 |
Publication status | Published - 2009 |
Event | 22nd Annual International Conference on Microelectronic Test Structures - Oxnard Duration: 30 Mar 2009 → 2 Apr 2009 |
Conference
Conference | 22nd Annual International Conference on Microelectronic Test Structures |
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City | Oxnard |
Period | 30/03/09 → 2/04/09 |
Keywords / Materials (for Non-textual outputs)
- PHASE-SHIFTING MASKS
- CD
- METROLOGY
- OVERLAY