Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization

N O V  Plank; G A  Forrest; R  Cheung; A J  Alexander

doi:10.1021/jp055103o

Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization

N O V Plank, G A Forrest, R Cheung, A J Alexander

Research output: Contribution to journal › Letter › peer-review

Abstract

Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SW-NTs and n-type semiconducting behavior for arnino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.

Original language	English
Pages (from-to)	22096-22101
Number of pages	6
Journal	Journal of Physical Chemistry B (Soft Condensed Matter and Biophysical Chemistry)
Volume	109
Issue number	47
DOIs	https://doi.org/10.1021/jp055103o
Publication status	Published - 1 Dec 2005

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title = "Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization",

abstract = "Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SW-NTs and n-type semiconducting behavior for arnino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.",

author = "Plank, {N O V} and Forrest, {G A} and R Cheung and Alexander, {A J}",

year = "2005",

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doi = "10.1021/jp055103o",

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T1 - Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization

AU - Plank, N O V

AU - Forrest, G A

AU - Cheung, R

AU - Alexander, A J

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SW-NTs and n-type semiconducting behavior for arnino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.

AB - Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SW-NTs and n-type semiconducting behavior for arnino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.

U2 - 10.1021/jp055103o

DO - 10.1021/jp055103o

M3 - Letter

SN - 1520-6106

VL - 109

SP - 22096

EP - 22101

JO - Journal of Physical Chemistry B (Soft Condensed Matter and Biophysical Chemistry)

JF - Journal of Physical Chemistry B (Soft Condensed Matter and Biophysical Chemistry)

IS - 47

ER -

Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization

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