Electronic properties of thin films sublimed from La@C82 and Li@C60

V. N. Popok; Andrei Gromov; M. Jonsson; A. Taninaka; H. Shinohara; Eleanor E.B. Campbell

doi:10.1142/S1793292008000988

Electronic properties of thin films sublimed from La@C₈₂ and Li@C₆₀

V. N. Popok, Andrei Gromov, M. Jonsson, A. Taninaka, H. Shinohara, Eleanor E.B. Campbell

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

La@C₈₂ and Li@C₆₀ thin films obtained by sublimation in vacuum are studied using four-probe current-voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21±8 and 1230±50 Ωcm for the La@C₈₂ and Li@C₆₀, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@C₆₀ film structure increasing the film resistivity to values typical for C₆₀ are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Nano
Volume	3
Issue number	3
DOIs	https://doi.org/10.1142/S1793292008000988
Publication status	Published - Jun 2008

Keywords / Materials (for Non-textual outputs)

Endohedral metallofullerenes
electronic transport
atomic force microscopy
ENDOHEDRAL METALLOFULLERENES
TEMPERATURE CONDUCTIVITY
CHARGE-TRANSFER
C-60 FILMS
COMPLEXES
LANTHANUM
OXYGEN
POLARIZABILITY
SPECTROSCOPY
CONDUCTANCE

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10.1142/S1793292008000988

Electronic properties of thin films sublimed from La@C82 and Li@C60
Copyright © 2008 World Scientific Publishing Co. All rights reserved.
Accepted author manuscript, 462 KB

http://www.worldscientific.com/doi/abs/10.1142/S1793292008000988

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title = "Electronic properties of thin films sublimed from La@C82 and Li@C60",

abstract = "La@C82 and Li@C60 thin films obtained by sublimation in vacuum are studied using four-probe current-voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21±8 and 1230±50 Ωcm for the La@C82 and Li@C60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@C60 film structure increasing the film resistivity to values typical for C60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.",

keywords = "Endohedral metallofullerenes, electronic transport, atomic force microscopy, ENDOHEDRAL METALLOFULLERENES, TEMPERATURE CONDUCTIVITY, CHARGE-TRANSFER, C-60 FILMS, COMPLEXES, LANTHANUM, OXYGEN, POLARIZABILITY, SPECTROSCOPY, CONDUCTANCE",

author = "Popok, {V. N.} and Andrei Gromov and M. Jonsson and A. Taninaka and H. Shinohara and Campbell, {Eleanor E.B.}",

year = "2008",

month = jun,

doi = "10.1142/S1793292008000988",

language = "English",

volume = "3",

pages = "155--160",

journal = "Nano",

issn = "1793-2920",

publisher = "World Scientific",

number = "3",

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TY - JOUR

T1 - Electronic properties of thin films sublimed from La@C82 and Li@C60

AU - Popok, V. N.

AU - Gromov, Andrei

AU - Jonsson, M.

AU - Taninaka, A.

AU - Shinohara, H.

AU - Campbell, Eleanor E.B.

PY - 2008/6

Y1 - 2008/6

N2 - La@C82 and Li@C60 thin films obtained by sublimation in vacuum are studied using four-probe current-voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21±8 and 1230±50 Ωcm for the La@C82 and Li@C60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@C60 film structure increasing the film resistivity to values typical for C60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

AB - La@C82 and Li@C60 thin films obtained by sublimation in vacuum are studied using four-probe current-voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21±8 and 1230±50 Ωcm for the La@C82 and Li@C60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@C60 film structure increasing the film resistivity to values typical for C60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

KW - Endohedral metallofullerenes

KW - electronic transport

KW - atomic force microscopy

KW - ENDOHEDRAL METALLOFULLERENES

KW - TEMPERATURE CONDUCTIVITY

KW - CHARGE-TRANSFER

KW - C-60 FILMS

KW - COMPLEXES

KW - LANTHANUM

KW - OXYGEN

KW - POLARIZABILITY

KW - SPECTROSCOPY

KW - CONDUCTANCE

UR - http://www.scopus.com/inward/record.url?scp=56349083712&partnerID=8YFLogxK

U2 - 10.1142/S1793292008000988

DO - 10.1142/S1793292008000988

M3 - Article

SN - 1793-2920

VL - 3

SP - 155

EP - 160

JO - Nano

JF - Nano

IS - 3

ER -

Electronic properties of thin films sublimed from La@C₈₂ and Li@C₆₀

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Keywords / Materials (for Non-textual outputs)

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