Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field.

Elizabeth Austin, M Jaros

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	5569-5572
Number of pages	4
Journal	Physical Review B (Condensed Matter)
Volume	B31
Issue number	8
DOIs	https://doi.org//10.1103/PhysRevB.31.5569
Publication status	Published - 1985

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Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field
© Austin, E., & Jaros, M. (1985). Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field.Physical Review B: Condensed Matter and Materials Physics, B31(8), 5569-5572doi: /10.1103/PhysRevB.31.5569
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