Elevated Temperature Kinetics of Void Growth in Silicon

V. M. Vishnyakov, S. E. Donnelly, G. Carter, R. C. Birtcher, L. I. Haworth, J. G. Terry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	Undefined/Unknown
Title of host publication	International Workshop on Semiconductor Defect Engineering: Progress and Prospects
Publication status	Published - 2002

Cite this

@inproceedings{d4613c587dcd422b90aacab9c70b457a,

title = "Elevated Temperature Kinetics of Void Growth in Silicon",

author = "Vishnyakov, {V. M.} and Donnelly, {S. E.} and G. Carter and Birtcher, {R. C.} and Haworth, {L. I.} and Terry, {J. G.}",

year = "2002",

language = "Undefined/Unknown",

booktitle = "International Workshop on Semiconductor Defect Engineering: Progress and Prospects",

}