Elevated Temperature Kinetics of Void Growth in Silicon

V. M. Vishnyakov, S. E. Donnelly, G. Carter, R. C. Birtcher, L. I. Haworth, J. G. Terry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageUndefined/Unknown
Title of host publicationInternational Workshop on Semiconductor Defect Engineering: Progress and Prospects
Publication statusPublished - 2002

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