A BiVO4/2D g‐C3N4 direct dual semiconductor photocatalytic system has been fabricated via electrostatic self‐assembly method of BiVO4 microparticle and g‐C3N4 nanosheet. According to experimental measurements and first‐principle calculations, the formation of built‐in electric field and the opposite band bending around the interface region in BiVO4/2D g‐C3N4 as well as the intimate contact between BiVO4 and 2D g‐C3N4 will lead to high separation efficiency of charge carriers. More importantly, the intensity of bulid‐in electric field is greatly enhanced due to the ultrathin nanosheet structure of 2D g‐C3N4. As a result, BiVO4/2D g‐C3N4 exhibits excellent photocatalytic performance with the 93.0% Rhodamine B (RhB) removal after 40 min visible light irradiation, and the photocatalytic reaction rate is about 22.7 and 10.3 times as high as that of BiVO4 and 2D g‐C3N4, respectively. In addition, BiVO4/2D g‐C3N4 also displays enhanced photocatalytic performance in the degradation of tetracycline (TC). It is expected that this work may provide insights into the understanding the significant role of built‐in electric field in heterostructure and fabricating highly efficient direct dual semiconductor systems.
- built‐in electric field
- g‐C3N4 nanosheet
- interfacial electronic effects
- Photocatalytic degradation