Etch mechanism and etch-induced effects in the inductively coupled plasma (ICP) etching of GaN

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	1268-1272
Number of pages	5
Journal	Journal of Vacuum Science and Technology B
Volume	B21
Publication status	Published - 2003

Cite this

@article{b81c3a9a8efe4a61b93a9e4757deebe3,

title = "Etch mechanism and etch-induced effects in the inductively coupled plasma (ICP) etching of GaN",

author = "Rebecca Cheung and B. Rong and Drift, \{E. van der\} and Sloof, \{W. G.\}",

year = "2003",

language = "Undefined/Unknown",

volume = "B21",

pages = "1268--1272",

journal = "Journal of Vacuum Science and Technology B",

issn = "1520-8567",

publisher = "AVS Science and Technology Society",

}

TY - JOUR

T1 - Etch mechanism and etch-induced effects in the inductively coupled plasma (ICP) etching of GaN

AU - Cheung, Rebecca

AU - Rong, B.

AU - Drift, E. van der

AU - Sloof, W. G.

PY - 2003

Y1 - 2003

M3 - Article

SN - 1520-8567

SN - 2166-2754

VL - B21

SP - 1268

EP - 1272

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

ER -