TY - JOUR
T1 - Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
AU - Brivio, S.
AU - Covi, E.
AU - Serb, A.
AU - Prodromakis, T.
AU - Fanciulli, M.
AU - Spiga, S.
N1 - Funding Information:
This work was partially supported by the European project RAMP (FP7-ICT-2013-10, Grant Agreement No. 612058). The authors acknowledge Dr. E. Cianci for the support in material synthesis.
Publisher Copyright:
© 2016 Author(s).
PY - 2016/9/27
Y1 - 2016/9/27
N2 - The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.
AB - The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.
UR - http://www.scopus.com/inward/record.url?scp=84989246376&partnerID=8YFLogxK
U2 - 10.1063/1.4963675
DO - 10.1063/1.4963675
M3 - Article
AN - SCOPUS:84989246376
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 13
M1 - 133504
ER -