Fabrication and electrical characteristics of memristors with TiO 2/TiO2+x active layers

T. Prodromakis; K. Michelakis; C. Toumazou

doi:10.1109/ISCAS.2010.5537379

Fabrication and electrical characteristics of memristors with TiO ₂/TiO_2+x active layers

T. Prodromakis^*, K. Michelakis, C. Toumazou

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the fabrication and electrical characterisation of memristors with TiO₂/TiO_2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO₂/TiO_2-x active cores.

Original language	English
Title of host publication	ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems
Subtitle of host publication	Nano-Bio Circuit Fabrics and Systems
Pages	1520-1522
Number of pages	3
DOIs	https://doi.org/10.1109/ISCAS.2010.5537379
Publication status	Published - 3 Aug 2010
Event	2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 - Paris, France Duration: 30 May 2010 → 2 Jun 2010

Publication series

Name	ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Conference

Conference	2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010
Country/Territory	France
City	Paris
Period	30/05/10 → 2/06/10

Keywords / Materials (for Non-textual outputs)

Memristance
Memristor
RF-sputtering
Switching elements
TiO

Access to Document

10.1109/ISCAS.2010.5537379

Cite this

Prodromakis, T., Michelakis, K., & Toumazou, C. (2010). Fabrication and electrical characteristics of memristors with TiO ₂/TiO_2+x active layers. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems (pp. 1520-1522). Article 5537379 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems). https://doi.org/10.1109/ISCAS.2010.5537379

Prodromakis, T. ; Michelakis, K. ; Toumazou, C. / Fabrication and electrical characteristics of memristors with TiO ₂/TiO_2+x active layers. ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. pp. 1520-1522 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems).

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title = "Fabrication and electrical characteristics of memristors with TiO 2/TiO2+x active layers",

abstract = "We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.",

keywords = "Memristance, Memristor, RF-sputtering, Switching elements, TiO",

author = "T. Prodromakis and K. Michelakis and C. Toumazou",

year = "2010",

month = aug,

day = "3",

doi = "10.1109/ISCAS.2010.5537379",

language = "English",

isbn = "9781424453085",

series = "ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems",

pages = "1520--1522",

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note = "2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 ; Conference date: 30-05-2010 Through 02-06-2010",

}

Prodromakis, T, Michelakis, K & Toumazou, C 2010, Fabrication and electrical characteristics of memristors with TiO ₂/TiO_2+x active layers. in ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems., 5537379, ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, pp. 1520-1522, 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010, Paris, France, 30/05/10. https://doi.org/10.1109/ISCAS.2010.5537379

Fabrication and electrical characteristics of memristors with TiO ₂/TiO_2+x active layers. / Prodromakis, T.; Michelakis, K.; Toumazou, C.
ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. p. 1520-1522 5537379 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Michelakis, K.

AU - Toumazou, C.

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AB - We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.

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Prodromakis T, Michelakis K, Toumazou C. Fabrication and electrical characteristics of memristors with TiO ₂/TiO_2+x active layers. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. p. 1520-1522. 5537379. (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems). doi: 10.1109/ISCAS.2010.5537379