Fabrication and electrical characteristics of memristors with TiO 2/TiO2+x active layers

T. Prodromakis*, K. Michelakis, C. Toumazou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.

Original languageEnglish
Title of host publicationISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems
Subtitle of host publicationNano-Bio Circuit Fabrics and Systems
Pages1520-1522
Number of pages3
DOIs
Publication statusPublished - 3 Aug 2010
Event2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 - Paris, France
Duration: 30 May 20102 Jun 2010

Publication series

NameISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Conference

Conference2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010
Country/TerritoryFrance
CityParis
Period30/05/102/06/10

Keywords / Materials (for Non-textual outputs)

  • Memristance
  • Memristor
  • RF-sputtering
  • Switching elements
  • TiO

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