Fabrication of 200nm field effect transistors by X-ray Lithography using a laser-plasma X-ray source

C. M. Reeves; I. C. E. Turcu; Tom Stevenson; A. W. S. Ross; A. M. Gundlach; P. Prewett; R. A. Lawes; P. Anastasi; R. Burge; P. Mitchell

Fabrication of 200nm field effect transistors by X-ray Lithography using a laser-plasma X-ray source

C. M. Reeves, I. C. E. Turcu, Tom Stevenson, A. W. S. Ross, A. M. Gundlach, P. Prewett, R. A. Lawes, P. Anastasi, R. Burge, P. Mitchell

School of Engineering

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	187-190
Number of pages	4
Journal	Microcircuit Engineering
Volume	30
Publication status	Published - 1996

Cite this

@article{49bf11d6dea54a32bfad2a16266eea27,

title = "Fabrication of 200nm field effect transistors by X-ray Lithography using a laser-plasma X-ray source",

author = "Reeves, {C. M.} and Turcu, {I. C. E.} and Tom Stevenson and Ross, {A. W. S.} and Gundlach, {A. M.} and P. Prewett and Lawes, {R. A.} and P. Anastasi and R. Burge and P. Mitchell",

year = "1996",

language = "Undefined/Unknown",

volume = "30",

pages = "187--190",

journal = "Microcircuit Engineering",

issn = "0893-5157",

}

TY - JOUR

T1 - Fabrication of 200nm field effect transistors by X-ray Lithography using a laser-plasma X-ray source

AU - Reeves, C. M.

AU - Turcu, I. C. E.

AU - Stevenson, Tom

AU - Ross, A. W. S.

AU - Gundlach, A. M.

AU - Prewett, P.

AU - Lawes, R. A.

AU - Anastasi, P.

AU - Burge, R.

AU - Mitchell, P.

PY - 1996

Y1 - 1996

M3 - Article

SN - 0893-5157

VL - 30

SP - 187

EP - 190

JO - Microcircuit Engineering

JF - Microcircuit Engineering

ER -