Fine structure in the α decay of Bi

J. Wauters; J.C. Batchelder; C.R. Bingham; D.J. Blumenthal; L.T. Brown; L.F. Conticchio; C.N. Davids; T. Davinson; R.J. Irvine; D. Seweryniak; K.S. Toth; W.B. Walters; P.J. Woods; E.F. Zganjar

Fine structure in the α decay of Bi

J. Wauters, J.C. Batchelder, C.R. Bingham, D.J. Blumenthal, L.T. Brown, L.F. Conticchio, C.N. Davids, T. Davinson, R.J. Irvine, D. Seweryniak, K.S. Toth, W.B. Walters, P.J. Woods, E.F. Zganjar

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.

Original language	English
Pages (from-to)	1192-1196
Number of pages	5
Journal	Physical Review C
Volume	55
Issue number	3
Publication status	Published - 1 Mar 1997

Cite this

@article{d959f5b0b1e745fcaa70398075814906,

title = "Fine structure in the α decay of Bi",

abstract = "A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.",

author = "J. Wauters and J.C. Batchelder and C.R. Bingham and D.J. Blumenthal and L.T. Brown and L.F. Conticchio and C.N. Davids and T. Davinson and R.J. Irvine and D. Seweryniak and K.S. Toth and W.B. Walters and P.J. Woods and E.F. Zganjar",

year = "1997",

month = mar,

day = "1",

language = "English",

volume = "55",

pages = "1192--1196",

journal = "Physical Review C",

issn = "0556-2813",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Fine structure in the α decay of Bi

AU - Wauters, J.

AU - Batchelder, J.C.

AU - Bingham, C.R.

AU - Blumenthal, D.J.

AU - Brown, L.T.

AU - Conticchio, L.F.

AU - Davids, C.N.

AU - Davinson, T.

AU - Irvine, R.J.

AU - Seweryniak, D.

AU - Toth, K.S.

AU - Walters, W.B.

AU - Woods, P.J.

AU - Zganjar, E.F.

PY - 1997/3/1

Y1 - 1997/3/1

N2 - A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.

AB - A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-13744265771&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:13744265771

SN - 0556-2813

VL - 55

SP - 1192

EP - 1196

JO - Physical Review C

JF - Physical Review C

IS - 3

ER -

Fine structure in the α decay of Bi

Abstract

Other files and links

Fingerprint

Cite this