Fine structure in the α decay of Bi

J. Wauters, J.C. Batchelder, C.R. Bingham, D.J. Blumenthal, L.T. Brown, L.F. Conticchio, C.N. Davids, T. Davinson, R.J. Irvine, D. Seweryniak, K.S. Toth, W.B. Walters, P.J. Woods, E.F. Zganjar

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.
Original languageEnglish
Pages (from-to)1192-1196
Number of pages5
JournalPhysical Review C
Issue number3
Publication statusPublished - 1 Mar 1997


Dive into the research topics of 'Fine structure in the α decay of Bi'. Together they form a unique fingerprint.

Cite this