Fine structure in the α decay of Bi

A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.