First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

E Gros-daillon, L Maingault, L André, V Reboud, L Verger, E Charbon, C Bruschini, C Veerappan, D Stoppa, N Massari, M Perenzoni, L H C Braga, L Gasparini, R K Henderson, R Walker, S East, L Grant, B Jatekos, E Lorincz, F UjhelyiG Erdei, P Major, Z Papp, G Nemeth

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.
Original languageEnglish
Pages (from-to)C12026-C12026
Number of pages9
JournalJournal of Instrumentation
Volume8
Issue number12
DOIs
Publication statusPublished - 19 Dec 2013
Event15th International Workshop on Radiation Imaging Detectors (IWORID2013) - Paris, France
Duration: 23 Jul 201327 Jul 2013

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