First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

E Gros-daillon; L Maingault; L André; V Reboud; L Verger; E Charbon; C Bruschini; C Veerappan; D Stoppa; N Massari; M Perenzoni; L H C Braga; L Gasparini; R K Henderson; R Walker; S East; L Grant; B Jatekos; E Lorincz; F Ujhelyi; G Erdei; P Major; Z Papp; G Nemeth

doi:10.1088/1748-0221/8/12/C12026

First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

E Gros-daillon, L Maingault, L André, V Reboud, L Verger, E Charbon, C Bruschini, C Veerappan, D Stoppa, N Massari, M Perenzoni, L H C Braga, L Gasparini, R K Henderson, R Walker, S East, L Grant, B Jatekos, E Lorincz, F UjhelyiG Erdei, P Major, Z Papp, G Nemeth

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.

Original language	English
Pages (from-to)	C12026-C12026
Number of pages	9
Journal	Journal of Instrumentation
Volume	8
Issue number	12
DOIs	https://doi.org/10.1088/1748-0221/8/12/C12026
Publication status	Published - 19 Dec 2013
Event	15th International Workshop on Radiation Imaging Detectors (IWORID2013) - Paris, France Duration: 23 Jul 2013 → 27 Jul 2013

Access to Document

10.1088/1748-0221/8/12/C12026

1748-0221_8_12_C12026

http://stacks.iop.org/1748-0221/8/i=12/a=C12026?key=crossref.c38162e53136bab50f0ae98fd58f82df

SPADNET
Henderson, R.
EU government bodies
1/07/10 → 31/12/14
Project: Research

Cite this

Gros-daillon, E., Maingault, L., André, L., Reboud, V., Verger, L., Charbon, E., Bruschini, C., Veerappan, C., Stoppa, D., Massari, N., Perenzoni, M., Braga, L. H. C., Gasparini, L., Henderson, R. K., Walker, R., East, S., Grant, L., Jatekos, B., Lorincz, E., ... Nemeth, G. (2013). First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications. Journal of Instrumentation, 8(12), C12026-C12026. https://doi.org/10.1088/1748-0221/8/12/C12026

@article{9d237d7aa9e84acb810791bee60f8c8e,

title = "First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications",

abstract = "Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented. ",

author = "E Gros-daillon and L Maingault and L Andr{\'e} and V Reboud and L Verger and E Charbon and C Bruschini and C Veerappan and D Stoppa and N Massari and M Perenzoni and Braga, {L H C} and L Gasparini and Henderson, {R K} and R Walker and S East and L Grant and B Jatekos and E Lorincz and F Ujhelyi and G Erdei and P Major and Z Papp and G Nemeth",

year = "2013",

month = dec,

day = "19",

doi = "10.1088/1748-0221/8/12/C12026",

language = "English",

volume = "8",

pages = "C12026--C12026",

journal = "Journal of Instrumentation",

issn = "1748-0221",

publisher = "IOP Publishing",

number = "12",

note = "15th International Workshop on Radiation Imaging Detectors (IWORID2013) ; Conference date: 23-07-2013 Through 27-07-2013",

}

Gros-daillon, E, Maingault, L, André, L, Reboud, V, Verger, L, Charbon, E, Bruschini, C, Veerappan, C, Stoppa, D, Massari, N, Perenzoni, M, Braga, LHC, Gasparini, L, Henderson, RK, Walker, R, East, S, Grant, L, Jatekos, B, Lorincz, E, Ujhelyi, F, Erdei, G, Major, P, Papp, Z & Nemeth, G 2013, 'First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications', Journal of Instrumentation, vol. 8, no. 12, pp. C12026-C12026. https://doi.org/10.1088/1748-0221/8/12/C12026

TY - JOUR

T1 - First characterization of the SPADnet sensor

T2 - 15th International Workshop on Radiation Imaging Detectors (IWORID2013)

AU - Gros-daillon, E

AU - Maingault, L

AU - André, L

AU - Reboud, V

AU - Verger, L

AU - Charbon, E

AU - Bruschini, C

AU - Veerappan, C

AU - Stoppa, D

AU - Massari, N

AU - Perenzoni, M

AU - Braga, L H C

AU - Gasparini, L

AU - Henderson, R K

AU - Walker, R

AU - East, S

AU - Grant, L

AU - Jatekos, B

AU - Lorincz, E

AU - Ujhelyi, F

AU - Erdei, G

AU - Major, P

AU - Papp, Z

AU - Nemeth, G

PY - 2013/12/19

Y1 - 2013/12/19

N2 - Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.

AB - Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.

U2 - 10.1088/1748-0221/8/12/C12026

DO - 10.1088/1748-0221/8/12/C12026

M3 - Article

SN - 1748-0221

VL - 8

SP - C12026-C12026

JO - Journal of Instrumentation

JF - Journal of Instrumentation

IS - 12

Y2 - 23 July 2013 through 27 July 2013

ER -

First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

Abstract

Access to Document

Fingerprint

Projects

SPADNET

Cite this