Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Firman Mangasa Simanjuntak*, Julianna Panidi, Fayzah Talbi, Adam Kerrigan, Vlado K. Lazarov, Themistoklis Prodromakis

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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