Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Firman Mangasa Simanjuntak^*, Julianna Panidi, Fayzah Talbi, Adam Kerrigan, Vlado K. Lazarov, Themistoklis Prodromakis

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

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Active
FORTE: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
Koch, D., Prodromakis, T., Constandinou, T. G., Dudek, P. & Papavassiliou, C.
Engineering and Physical Sciences Research Council
1/05/22 → 30/03/25
Project: Research