Gradual set dynamics in HfO2-based memristor driven by sub-Threshold voltage pulses

S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

The switching dynamics of filamentary Pt/HfO2/TiN memristive devices is managed through sub-Threshold pulses in order to display gradual resistance decrease useful for analog logic computation based on spiking networks. Such memristive devices are known to display abrupt set transitions (resistance decrease) that require current limitation because of the triggering of a threshold switching event. In this report, we demonstrate the gradual resistance decrease driven by trains of identical sub-Threshold pulses. The experimental finding is explained by a compact model considering a gradual closure of the filament interruption and a following lateral filament growth.

Original languageEnglish
Title of host publication2015 International Conference on Memristive Systems, MEMRISYS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467392099
DOIs
Publication statusPublished - 18 Jan 2016
EventInternational Conference on Memristive Systems, MEMRISYS 2015 - Paphos, Cyprus
Duration: 8 Nov 201510 Nov 2015

Publication series

Name2015 International Conference on Memristive Systems, MEMRISYS 2015

Conference

ConferenceInternational Conference on Memristive Systems, MEMRISYS 2015
Country/TerritoryCyprus
CityPaphos
Period8/11/1510/11/15

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