Hexagonal Si-Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature

George Serghiou, Nicholas Odling, Hans Josef Reichmann, Gang Ji, Monika Koch-Mueller, Daniel J. Frost, Jonathan P. Wright, Reinhard Boehler, Wolfgang Morgenroth

Research output: Contribution to journalArticlepeer-review

Abstract

Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.
Original languageEnglish
Pages (from-to)14217-14224
Number of pages8
JournalChemistry - A European Journal
Volume27
Issue number57
Early online date16 Sep 2021
DOIs
Publication statusPublished - 13 Oct 2021

Keywords

  • alloys
  • diffraction
  • high-pressure and -temperature chemistry
  • materials synthesis
  • reactivity
  • solid solutions

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