Hexagonal Si-Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature

George Serghiou; Nicholas Odling; Hans Josef Reichmann; Gang Ji; Monika Koch-Mueller; Daniel J. Frost; Jonathan P. Wright; Reinhard Boehler; Wolfgang Morgenroth

doi:10.1002/chem.202102595

Hexagonal Si-Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature

George Serghiou, Nicholas Odling, Hans Josef Reichmann, Gang Ji, Monika Koch-Mueller, Daniel J. Frost, Jonathan P. Wright, Reinhard Boehler, Wolfgang Morgenroth

Research output: Contribution to journal › Article › peer-review

Abstract

Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.

Original language	English
Pages (from-to)	14217-14224
Number of pages	8
Journal	Chemistry - A European Journal
Volume	27
Issue number	57
Early online date	16 Sept 2021
DOIs	https://doi.org/10.1002/chem.202102595
Publication status	Published - 13 Oct 2021

Keywords / Materials (for Non-textual outputs)

alloys
diffraction
high-pressure and -temperature chemistry
materials synthesis
reactivity
solid solutions

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10.1002/chem.202102595

Accepted ArticleAccepted author manuscript, 1.23 MB

Cite this

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title = "Hexagonal Si-Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature",

abstract = "Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.",

keywords = "alloys, diffraction, high-pressure and -temperature chemistry, materials synthesis, reactivity, solid solutions",

author = "George Serghiou and Nicholas Odling and Reichmann, {Hans Josef} and Gang Ji and Monika Koch-Mueller and Frost, {Daniel J.} and Wright, {Jonathan P.} and Reinhard Boehler and Wolfgang Morgenroth",

note = "Article selected by the Journal as a Cover Feature",

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doi = "10.1002/chem.202102595",

language = "English",

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T1 - Hexagonal Si-Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature

AU - Serghiou, George

AU - Odling, Nicholas

AU - Reichmann, Hans Josef

AU - Ji, Gang

AU - Koch-Mueller, Monika

AU - Frost, Daniel J.

AU - Wright, Jonathan P.

AU - Boehler, Reinhard

AU - Morgenroth, Wolfgang

N1 - Article selected by the Journal as a Cover Feature

PY - 2021/10/13

Y1 - 2021/10/13

N2 - Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.

AB - Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.

KW - alloys

KW - diffraction

KW - high-pressure and -temperature chemistry

KW - materials synthesis

KW - reactivity

KW - solid solutions

U2 - 10.1002/chem.202102595

DO - 10.1002/chem.202102595

M3 - Article

SN - 0947-6539

VL - 27

SP - 14217

EP - 14224

JO - Chemistry - A European Journal

JF - Chemistry - A European Journal

IS - 57

ER -

Hexagonal Si-Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature

Abstract

Keywords / Materials (for Non-textual outputs)

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