High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Richard J. Walker; Eric A. G. Webster; Jiahao Li; Nicola Massari; Robert K. Henderson

doi:10.1109/NSSMIC.2012.6551449

High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Richard J. Walker, Eric A. G. Webster, Jiahao Li, Nicola Massari, Robert K. Henderson

School of Engineering

Research output: Contribution to conference › Other › peer-review

Abstract / Description of output

This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

Original language	English
Pages	1945-1948
Number of pages	4
DOIs	https://doi.org/10.1109/NSSMIC.2012.6551449
Publication status	Published - Oct 2012
Event	2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC) - Anaheim, CA, USA, United Kingdom Duration: 27 Oct 2012 → 3 Nov 2012

Conference

Conference	2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC)
Country/Territory	United Kingdom
City	Anaheim, CA, USA
Period	27/10/12 → 3/11/12

Access to Document

10.1109/NSSMIC.2012.6551449

http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6551449

SPADNET
Henderson, R.
EU government bodies
1/07/10 → 31/12/14
Project: Research

Cite this

@conference{fd00d9e9ec07493cb6b020c5fef39e12,

title = "High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology",

abstract = "This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.",

author = "Walker, {Richard J.} and Webster, {Eric A. G.} and Jiahao Li and Nicola Massari and Henderson, {Robert K.}",

year = "2012",

month = oct,

doi = "10.1109/NSSMIC.2012.6551449",

language = "English",

pages = "1945--1948",

note = "2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC) ; Conference date: 27-10-2012 Through 03-11-2012",

}

TY - CONF

T1 - High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

AU - Walker, Richard J.

AU - Webster, Eric A. G.

AU - Li, Jiahao

AU - Massari, Nicola

AU - Henderson, Robert K.

PY - 2012/10

Y1 - 2012/10

N2 - This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

AB - This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

U2 - 10.1109/NSSMIC.2012.6551449

DO - 10.1109/NSSMIC.2012.6551449

M3 - Other

SP - 1945

EP - 1948

T2 - 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC)

Y2 - 27 October 2012 through 3 November 2012

ER -

High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Abstract / Description of output

Conference

Access to Document

Fingerprint

Projects

SPADNET

Cite this