High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Richard J. Walker; Eric A. G. Webster; Jiahao Li; Nicola Massari; Robert K. Henderson

doi:10.1109/NSSMIC.2012.6551449

High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Richard J. Walker
, Eric A. G. Webster
, Jiahao Li
, Nicola Massari
, Robert K. Henderson

School of Engineering

Research output: Contribution to conference › Other › peer-review

Abstract

This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

Original language	English
Pages	1945-1948
Number of pages	4
DOIs	https://doi.org/10.1109/NSSMIC.2012.6551449
Publication status	Published - Oct 2012
Event	2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC) - Anaheim, CA, USA, United Kingdom Duration: 27 Oct 2012 → 3 Nov 2012

Conference

Conference	2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC)
Country/Territory	United Kingdom
City	Anaheim, CA, USA
Period	27/10/12 → 3/11/12

Access to Document

10.1109/NSSMIC.2012.6551449

http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6551449

SPADNET
Henderson, R. (Principal Investigator)
EU government bodies
1/07/10 → 31/12/14
Project: Research

Cite this

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title = "High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology",

abstract = "This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38\%. Integral crosstalk of <;2\% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.",

author = "Walker, \{Richard J.\} and Webster, \{Eric A. G.\} and Jiahao Li and Nicola Massari and Henderson, \{Robert K.\}",

year = "2012",

month = oct,

doi = "10.1109/NSSMIC.2012.6551449",

language = "English",

pages = "1945--1948",

note = "2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC) ; Conference date: 27-10-2012 Through 03-11-2012",

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AU - Walker, Richard J.

AU - Webster, Eric A. G.

AU - Li, Jiahao

AU - Massari, Nicola

AU - Henderson, Robert K.

PY - 2012/10

Y1 - 2012/10

N2 - This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

AB - This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its neighbors - the lowest yet reported for a high fill factor SiPM structure - measured using parallel readout channels allowing adjacent SPAD waveforms to be monitored in real time.

U2 - 10.1109/NSSMIC.2012.6551449

DO - 10.1109/NSSMIC.2012.6551449

M3 - Other

SP - 1945

EP - 1948

T2 - 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (2012 NSS/MIC)

Y2 - 27 October 2012 through 3 November 2012

ER -

High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

Abstract

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SPADNET

Cite this