High-Performance WSe<inf>2</inf> Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

L. Yu, A. Zubair, E.J.G. Santos, X. Zhang, Y. Lin, Y. Zhang, T. Palacios

Research output: Contribution to journalArticlepeer-review

Abstract

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.
Original languageEnglish
JournalNano Letters
DOIs
Publication statusPublished - 12 Aug 2015

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