High precision analogue memristor state tuning

R. Berdan*, T. Prodromakis, C. Toumazou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

A report is presented on the operation of an analogue programming circuit for accurately setting the state of a memristor. The circuit exploits the dynamic modulation of resistance under a constant DC bias while real-time measurements of the memristance are performed using an AC signal. The circuit employs feedback for converging the state of a device at any required level within a decade. This allows the memristor to act as an analogue potentiometer, with its resistance corresponding to an input analogue voltage. This implementation was tested with the HP memristor model revealing an accuracy of less than 0.4 (8 bit precision) in relation to the full dynamic range.

Original languageEnglish
Pages (from-to)1105-1107
Number of pages3
JournalElectronics Letters
Issue number18
Publication statusPublished - 30 Aug 2012


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