High-pressure simulations of atom-vacancy solid solution

D Fuks; S Dorfman; G Ackland

High-pressure simulations of atom-vacancy solid solution

D Fuks, S Dorfman, G Ackland

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The thermodynamic properties (TP) of atom-vacancy copper-based solid solutions are investigated in Molecular Dynamic calculations with N-body potentials. We show the possibility to analyze the vacancy concentration dependence of TP in the high pressure simulations. Pressure-induced TP of atom-vacancy solid solution prove the necessity of accounting the peculiarities of the; crystal potential response in the study of vacancy-driven properties of solids.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Defect and Diffusion Forum
Volume	143
Publication status	Published - 1997
Event	International Conference on Diffusion in Materials (DIMAT 96) - NORDKIRCHEN, Germany Duration: 5 Aug 1996 → 9 Aug 1996

Keywords

thermodynamic properties
n-body potentials
atom-vacancy solid solution
SELF-DIFFUSION
DEPENDENCE
SILICON
METALS

Cite this

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title = "High-pressure simulations of atom-vacancy solid solution",

abstract = "The thermodynamic properties (TP) of atom-vacancy copper-based solid solutions are investigated in Molecular Dynamic calculations with N-body potentials. We show the possibility to analyze the vacancy concentration dependence of TP in the high pressure simulations. Pressure-induced TP of atom-vacancy solid solution prove the necessity of accounting the peculiarities of the; crystal potential response in the study of vacancy-driven properties of solids.",

keywords = "thermodynamic properties, n-body potentials, atom-vacancy solid solution, SELF-DIFFUSION, DEPENDENCE, SILICON, METALS",

author = "D Fuks and S Dorfman and G Ackland",

year = "1997",

language = "English",

volume = "143",

pages = "161--164",

journal = "Defect and Diffusion Forum",

issn = "1012-0386",

publisher = "Trans Tech Publications",

note = "International Conference on Diffusion in Materials (DIMAT 96) ; Conference date: 05-08-1996 Through 09-08-1996",

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TY - JOUR

T1 - High-pressure simulations of atom-vacancy solid solution

AU - Fuks, D

AU - Dorfman, S

AU - Ackland, G

PY - 1997

Y1 - 1997

N2 - The thermodynamic properties (TP) of atom-vacancy copper-based solid solutions are investigated in Molecular Dynamic calculations with N-body potentials. We show the possibility to analyze the vacancy concentration dependence of TP in the high pressure simulations. Pressure-induced TP of atom-vacancy solid solution prove the necessity of accounting the peculiarities of the; crystal potential response in the study of vacancy-driven properties of solids.

AB - The thermodynamic properties (TP) of atom-vacancy copper-based solid solutions are investigated in Molecular Dynamic calculations with N-body potentials. We show the possibility to analyze the vacancy concentration dependence of TP in the high pressure simulations. Pressure-induced TP of atom-vacancy solid solution prove the necessity of accounting the peculiarities of the; crystal potential response in the study of vacancy-driven properties of solids.

KW - thermodynamic properties

KW - n-body potentials

KW - atom-vacancy solid solution

KW - SELF-DIFFUSION

KW - DEPENDENCE

KW - SILICON

KW - METALS

M3 - Article

VL - 143

SP - 161

EP - 164

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

SN - 1012-0386

T2 - International Conference on Diffusion in Materials (DIMAT 96)

Y2 - 5 August 1996 through 9 August 1996

ER -

High-pressure simulations of atom-vacancy solid solution

Abstract

Keywords

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