High Pressure Structural Studies of AgInTe2

T. Bovornratanaraks, K. Kotmool, K. Yoodee, M. I. McMahon, D. Ruffolo, Malcolm McMahon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structural phase transformations in the chalcopyrite semiconductor AgInTe2 have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2 at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure.

Original languageEnglish
Title of host publicationINTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50
EditorsK Takemura
Place of PublicationBRISTOL
PublisherIOP Publishing Ltd.
Pages-
Number of pages4
ISBN (Print)*****************
DOIs
Publication statusPublished - 2010
EventJoint AIRAPT-22 and HPCJ-50 Conference/International Conference on High Pressure Science and Technology - Tokyo
Duration: 26 Jul 200931 Jul 2009

Conference

ConferenceJoint AIRAPT-22 and HPCJ-50 Conference/International Conference on High Pressure Science and Technology
CityTokyo
Period26/07/0931/07/09

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