Abstract
The structural phase transformations in the chalcopyrite semiconductor AgInTe2 have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2 at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure.
Original language | English |
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Title of host publication | INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50 |
Editors | K Takemura |
Place of Publication | BRISTOL |
Publisher | IOP Publishing |
Pages | - |
Number of pages | 4 |
ISBN (Print) | ***************** |
DOIs | |
Publication status | Published - 2010 |
Event | Joint AIRAPT-22 and HPCJ-50 Conference/International Conference on High Pressure Science and Technology - Tokyo Duration: 26 Jul 2009 → 31 Jul 2009 |
Conference
Conference | Joint AIRAPT-22 and HPCJ-50 Conference/International Conference on High Pressure Science and Technology |
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City | Tokyo |
Period | 26/07/09 → 31/07/09 |