Original language | Undefined/Unknown |
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Pages (from-to) | 237-241 |
Number of pages | 5 |
Journal | Materials Science in Semiconductor Processing |
Volume | 3(3) |
Publication status | Published - 2000 |
High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon
J. H. Evans-Freeman, A. R. Peaker, I. D. Hawkins, P. Y. Y. Kan, Jonathan Terry, L. Rubaldo, M. Ahmed, S. Watts, L. Dobaczewski
Research output: Contribution to journal › Article › peer-review