High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon

J. H. Evans-Freeman, A. R. Peaker, I. D. Hawkins, P. Y. Y. Kan, Jonathan Terry, L. Rubaldo, M. Ahmed, S. Watts, L. Dobaczewski

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
Pages (from-to)237-241
Number of pages5
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2000

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