High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon

J. H. Evans-Freeman; A. R. Peaker; I. D. Hawkins; P. Y. Y. Kan; Jonathan Terry; L. Rubaldo; M. Ahmed; S. Watts; L. Dobaczewski

High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon

J. H. Evans-Freeman
, A. R. Peaker
, I. D. Hawkins
, P. Y. Y. Kan
, Jonathan Terry
, L. Rubaldo
, M. Ahmed
, S. Watts
, L. Dobaczewski

School of Engineering

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	237-241
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	3(3)
Publication status	Published - 2000

Cite this

@article{7cb8396538ad40c497ac31edb2fe0ce4,

title = "High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon",

author = "Evans-Freeman, \{J. H.\} and Peaker, \{A. R.\} and Hawkins, \{I. D.\} and Kan, \{P. Y. Y.\} and Jonathan Terry and L. Rubaldo and M. Ahmed and S. Watts and L. Dobaczewski",

year = "2000",

language = "Undefined/Unknown",

volume = "3(3)",

pages = "237--241",

journal = "Materials Science in Semiconductor Processing",

issn = "1873-4081",

publisher = "Elsevier",

}

TY - JOUR

T1 - High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon

AU - Evans-Freeman, J. H.

AU - Peaker, A. R.

AU - Hawkins, I. D.

AU - Kan, P. Y. Y.

AU - Terry, Jonathan

AU - Rubaldo, L.

AU - Ahmed, M.

AU - Watts, S.

AU - Dobaczewski, L.

PY - 2000

Y1 - 2000

M3 - Article

SN - 1873-4081

VL - 3(3)

SP - 237

EP - 241

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -