High resolution reactive ion etching and damage effects in the $ Si/Ge sub x Si sub 1-x $ system

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2224-2228
Number of pages	5
Journal	Journal of Vacuum Science and Technology B
Volume	B11
Publication status	Published - 1993

Cite this

@article{cf9cc89df08844f98e3d2ac4333293cd,

title = "High resolution reactive ion etching and damage effects in the \$ Si/Ge sub x Si sub 1-x \$ system",

author = "Rebecca Cheung and T. Zijlstra and Drift, \{E. van der\} and Geerligs, \{L. J.\} and K. Werner and S. Radelaar",

year = "1993",

language = "Undefined/Unknown",

volume = "B11",

pages = "2224--2228",

journal = "Journal of Vacuum Science and Technology B",

issn = "1520-8567",

publisher = "AVS Science and Technology Society",

}

TY - JOUR

T1 - High resolution reactive ion etching and damage effects in the $ Si/Ge sub x Si sub 1-x $ system

AU - Cheung, Rebecca

AU - Zijlstra, T.

AU - Drift, E. van der

AU - Geerligs, L. J.

AU - Werner, K.

AU - Radelaar, S.

PY - 1993

Y1 - 1993

M3 - Article

SN - 1520-8567

SN - 2166-2754

VL - B11

SP - 2224

EP - 2228

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

ER -