Original language | English |
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Pages (from-to) | 2759-2763 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B |
Volume | B17 |
Publication status | Published - 1999 |
High resolution reactive ion etching of GaN and etch-induced effects
Rebecca Cheung, R. J. Reeves, S. Withanage, E. van der Drift, M. Kamp
Research output: Contribution to journal › Article › peer-review