High resolution reactive ion etching of GaN and etch-induced effects

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2759-2763
Number of pages	5
Journal	Journal of Vacuum Science and Technology B
Volume	B17
Publication status	Published - 1999

Cite this

@article{af686d6d2684452b92f09f0eab296e51,

title = "High resolution reactive ion etching of GaN and etch-induced effects",

author = "Rebecca Cheung and Reeves, \{R. J.\} and S. Withanage and Drift, \{E. van der\} and M. Kamp",

year = "1999",

language = "English",

volume = "B17",

pages = "2759--2763",

journal = "Journal of Vacuum Science and Technology B",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

}