High-speed GaN micro-LED arrays for data communications

A. E. Kelly*, J. J.D. McKendry, S. Zhang, D. Massoubre, B. R. Rae, R. P. Green, R. K. Henderson, M. D. Dawson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.

Original languageEnglish
Title of host publicationICTON 2012 - 14th International Conference on Transparent Optical Networks
DOIs
Publication statusPublished - 2012
Event14th International Conference on Transparent Optical Networks, ICTON 2012 - Coventry, United Kingdom
Duration: 2 Jul 20125 Jul 2012

Publication series

NameInternational Conference on Transparent Optical Networks
ISSN (Electronic)2162-7339

Conference

Conference14th International Conference on Transparent Optical Networks, ICTON 2012
CountryUnited Kingdom
CityCoventry
Period2/07/125/07/12

Keywords

  • complementary metal-oxide-semiconductor
  • high bandwidth
  • micro-light-emitting diodes (micro-LEDs)
  • multi-channel

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