High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process

F. Kaklin; J. M. Raynor; R. K. Henderson

doi:10.1109/IEDM.2018.8614656

High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process

F. Kaklin, J. M. Raynor, R. K. Henderson

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate passive high voltage generation using photodiodes biased in the photovoltaic region of operation. The photodiodes are integrated in a 90nm back side illuminated (BSI) deep trench isolation (DTI) capable imaging process technology. Four equal area, DTI separated arrays of photodiodes are implemented on a single die and connected using on-chip transmission gates (TG). The TGs control interconnects between the four arrays, connecting them in series or in parallel. A series configuration successfully generates an open-circuit voltage of 1.98V at 1klux. The full array generates 423nW/mm ² at 1klux of white LED illumination in series mode and 425nW/mm ² in parallel mode. Peak conversion efficiency is estimated at 16.1%, at 5.7klux white LED illumination.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers
Pages	32.2.1-32.2.4
Volume	2018-December
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614656
Publication status	Published - 17 Jan 2019
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18

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10.1109/IEDM.2018.8614656

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@inproceedings{f480983d794b44fa9abe5809fc508bec,

title = "High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process",

abstract = " We demonstrate passive high voltage generation using photodiodes biased in the photovoltaic region of operation. The photodiodes are integrated in a 90nm back side illuminated (BSI) deep trench isolation (DTI) capable imaging process technology. Four equal area, DTI separated arrays of photodiodes are implemented on a single die and connected using on-chip transmission gates (TG). The TGs control interconnects between the four arrays, connecting them in series or in parallel. A series configuration successfully generates an open-circuit voltage of 1.98V at 1klux. The full array generates 423nW/mm 2 at 1klux of white LED illumination in series mode and 425nW/mm 2 in parallel mode. Peak conversion efficiency is estimated at 16.1%, at 5.7klux white LED illumination. ",

author = "F. Kaklin and Raynor, {J. M.} and Henderson, {R. K.}",

note = "Acceptance date set to exclude from REF OA Policy ; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2019",

month = jan,

day = "17",

doi = "10.1109/IEDM.2018.8614656",

language = "English",

volume = "2018-December",

pages = "32.2.1--32.2.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Kaklin, F, Raynor, JM & Henderson, RK 2019, High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process. in 2018 IEEE International Electron Devices Meeting, IEDM 2018. vol. 2018-December, 8614656, Institute of Electrical and Electronics Engineers, pp. 32.2.1-32.2.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614656

High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process. / Kaklin, F.; Raynor, J. M.; Henderson, R. K.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Vol. 2018-December Institute of Electrical and Electronics Engineers, 2019. p. 32.2.1-32.2.4 8614656.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process

AU - Kaklin, F.

AU - Raynor, J. M.

AU - Henderson, R. K.

N1 - Acceptance date set to exclude from REF OA Policy

PY - 2019/1/17

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N2 - We demonstrate passive high voltage generation using photodiodes biased in the photovoltaic region of operation. The photodiodes are integrated in a 90nm back side illuminated (BSI) deep trench isolation (DTI) capable imaging process technology. Four equal area, DTI separated arrays of photodiodes are implemented on a single die and connected using on-chip transmission gates (TG). The TGs control interconnects between the four arrays, connecting them in series or in parallel. A series configuration successfully generates an open-circuit voltage of 1.98V at 1klux. The full array generates 423nW/mm 2 at 1klux of white LED illumination in series mode and 425nW/mm 2 in parallel mode. Peak conversion efficiency is estimated at 16.1%, at 5.7klux white LED illumination.

AB - We demonstrate passive high voltage generation using photodiodes biased in the photovoltaic region of operation. The photodiodes are integrated in a 90nm back side illuminated (BSI) deep trench isolation (DTI) capable imaging process technology. Four equal area, DTI separated arrays of photodiodes are implemented on a single die and connected using on-chip transmission gates (TG). The TGs control interconnects between the four arrays, connecting them in series or in parallel. A series configuration successfully generates an open-circuit voltage of 1.98V at 1klux. The full array generates 423nW/mm 2 at 1klux of white LED illumination in series mode and 425nW/mm 2 in parallel mode. Peak conversion efficiency is estimated at 16.1%, at 5.7klux white LED illumination.

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BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

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T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

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ER -

High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process

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