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Abstract
Two-dimensional (2D) materials promote the development of nanoelectronic devices, which requires candidate systems with both a
high carrier mobility and a sufficiently large electronic bandgap. We present a first principles calculation of the intrinsic carrier
mobilities of pristine (1L-AlN) and hydrogenated (1L-AlN-H 2 ) AlN nanosheets. Numerical results show that 1L-AlN shows a hole-
dominated ultra-large carrier mobility (up to 3000 cm 2 V −1 s −1 ). Upon fully-hydrogenation (1L-AlN-H 2 ), the polarity of carrier mobility
is reversed from hole-dominated to electron-dominated. This tunable polarity of intrinsic carrier mobility indicates single layer AlN
nanosheet a promising candidate for future nano-electronics.
high carrier mobility and a sufficiently large electronic bandgap. We present a first principles calculation of the intrinsic carrier
mobilities of pristine (1L-AlN) and hydrogenated (1L-AlN-H 2 ) AlN nanosheets. Numerical results show that 1L-AlN shows a hole-
dominated ultra-large carrier mobility (up to 3000 cm 2 V −1 s −1 ). Upon fully-hydrogenation (1L-AlN-H 2 ), the polarity of carrier mobility
is reversed from hole-dominated to electron-dominated. This tunable polarity of intrinsic carrier mobility indicates single layer AlN
nanosheet a promising candidate for future nano-electronics.
Original language | English |
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Journal | physica status solidi (RRL) - Rapid Research Letters |
DOIs | |
Publication status | Published - 27 Sept 2017 |
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Dive into the research topics of 'Hydrogenation induced carrier mobility polarity reversal in single layer AlN'. Together they form a unique fingerprint.Projects
- 2 Finished
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Interatomic potentials for oxide - metal interfaces in molecular dynamics
1/05/14 → 30/04/19
Project: Research