Impact of active areas on electrical characteristics of TiO2 based solid-state memristors

Qingjiang Li, Hui Xu, Ali Khiat, Zhaolin Sun, Themistoklis Prodromakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we explore the impact of active areas on electrical characteristics of practical TiO2 based memristors. Initially, it is experimentally demonstrated that high resistive state is independent of active areas, while low resistive state is in proportion to the dimensions of active cells. We then argue that these observations could stem from the filamentary formation and rupture within the TiO2 active cores. Finally, we investigate the dependence of I-V characteristics on active cell size and present measured results that are in good agreement with theoretical analysis.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages185-188
Number of pages4
ISBN (Electronic)9781479983919
DOIs
Publication statusPublished - 30 Jul 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: 24 May 201527 May 2015

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2015-July
ISSN (Print)0271-4310

Conference

ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 2015
Country/TerritoryPortugal
CityLisbon
Period24/05/1527/05/15

Keywords

  • active areas
  • I-V loop
  • solid-state memristor
  • TiO

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