Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

Maria Trapatseli, Simone Cortese, Alexander Serb, Ali Khiat, Themistoklis Prodromakis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Original languageEnglish
Article number184505
JournalJournal of applied physics
Volume121
Issue number18
DOIs
Publication statusPublished - 12 May 2017

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