Improved silicon nitride surfaces for next-generation microarrays

Jonathan G. Terry, Colin J. Campbell, Alan J. Ross, Andrew D. Livingston, Amy H. Buck, Paul Dickinson, Christopher P. Mountford, Stuart A. G. Evans, Andrew R. Mount, John S. Beattie, Jason Crain, Peter Ghazal, Anthony J. Walton

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

This work reports how the use of a standard integrated circuit (IC) fabrication process can improve the potential of silicon nitride layers as substrates for microarray technology. It has been shown that chemical mechanical polishing (CMP) substantially improves the fluorescent intensity of positive control gene and test gene microarray spots on both low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films, while maintaining a low fluorescent background. This results in the improved discrimination of low expressing genes. The results for the PECVD silicon nitride, which has been previously reported as unsuitable for microarray spotting, are particularly significant for future devices that hope to incorporate microelectronic control and analysis circuitry, due to the film's use as a final passivating layer.

Original languageEnglish
Pages (from-to)11400-11404
Number of pages5
Issue number26
Publication statusPublished - 19 Dec 2006

Keywords / Materials (for Non-textual outputs)



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