Incorporation of Helium-implant-induced Cavities Near the Active Regions of Metal-oxide-semiconductor Devices: Effects on dc Electrical Characteristics

J. Terry, L.I. Haworth, A.M. Gundlach, Tom Stevenson, V.M. Vishnyakov, S. E. Donnelly

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

The presence of helium-implant-induced void populations near the active junctions of large geometry devices was shown to have no detrimental effect on its electrical performance. The cavity populations were formed by helium implants of energy 40 keV and dose 5×10 cm followed by annealing at 900°C. The electrical characterization of the devices under investigation showed no observed dependence on the position of void distributions on the wafer.
Original languageEnglish
Pages (from-to)306-310
Number of pages5
JournalJournal of Vacuum Science and Technology B
Volume20
Issue number1
DOIs
Publication statusE-pub ahead of print - 1 Feb 2002

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