Incorporation of Helium-implant-induced Cavities Near the Active Regions of Metal-oxide-semiconductor Devices: Effects on dc Electrical Characteristics

J. Terry, L.I. Haworth, A.M. Gundlach, Tom Stevenson, V.M. Vishnyakov, S. E. Donnelly

School of Engineering

Research output: Contribution to journal › Article › peer-review

1 results

Filter

Finished
Micro-cavity techniques for gettering trace impurities in advanced semiconductor devices.
Haworth, L. (Principal Investigator)
EPSRC
1/02/99 → 30/09/02
Project: Research