Individually-addressable AlInGaN micro-LED arrays with CMOS control and sub-nanosecond output pulses

J. McKendry; Z. Gong; K. R. Muir; B. Guilhabert; D. Massoubre; E. Gu; M. D. Dawson; Robert Henderson

doi:10.1109/LPT.2009.2019114

Individually-addressable AlInGaN micro-LED arrays with CMOS control and sub-nanosecond output pulses

J. McKendry, Z. Gong, K. R. Muir, B. Guilhabert, D. Massoubre, E. Gu, M. D. Dawson, Robert Henderson

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

Original language	English
Pages (from-to)	811-813
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2009.2019114
Publication status	Published - 15 Jun 2009

Keywords / Materials (for Non-textual outputs)

GaN
complementary metal–oxide–semiconductor (CMOS)
micro-light-emitting diodes (micro-LEDs)
microdisplays

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10.1109/LPT.2009.2019114

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4814576

Cite this

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title = "Individually-addressable AlInGaN micro-LED arrays with CMOS control and sub-nanosecond output pulses",

abstract = "We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.",

keywords = "GaN , complementary metal–oxide–semiconductor (CMOS) , micro-light-emitting diodes (micro-LEDs) , microdisplays",

author = "J. McKendry and Z. Gong and Muir, {K. R.} and B. Guilhabert and D. Massoubre and E. Gu and Dawson, {M. D.} and Robert Henderson",

year = "2009",

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doi = "10.1109/LPT.2009.2019114",

language = "English",

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T1 - Individually-addressable AlInGaN micro-LED arrays with CMOS control and sub-nanosecond output pulses

AU - McKendry, J.

AU - Gong, Z.

AU - Muir, K. R.

AU - Guilhabert, B.

AU - Massoubre, D.

AU - Gu, E.

AU - Dawson, M. D.

AU - Henderson, Robert

PY - 2009/6/15

Y1 - 2009/6/15

N2 - We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

AB - We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

KW - GaN

KW - complementary metal–oxide–semiconductor (CMOS)

KW - micro-light-emitting diodes (micro-LEDs)

KW - microdisplays

UR - http://www.scopus.com/inward/record.url?scp=67649246860&partnerID=8YFLogxK

U2 - 10.1109/LPT.2009.2019114

DO - 10.1109/LPT.2009.2019114

M3 - Article

VL - 21

SP - 811

EP - 813

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Individually-addressable AlInGaN micro-LED arrays with CMOS control and sub-nanosecond output pulses

Abstract

Keywords / Materials (for Non-textual outputs)

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