Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

Naveen Kumar; Ankit Dixit; Ali Rezaei; Tapas Dutta; César Pascual García; Vihar Georgiev

doi:10.1109/NMDC57951.2023.10343913

Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

Naveen Kumar^*, Ankit Dixit, Ali Rezaei, Tapas Dutta, César Pascual García, Vihar Georgiev

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

Original language	English
Title of host publication	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Publisher	Institute of Electrical and Electronics Engineers
Pages	617-620
Number of pages	4
ISBN (Electronic)	9798350335460
DOIs	https://doi.org/10.1109/NMDC57951.2023.10343913
Publication status	Published - 12 Dec 2023
Event	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 - Paestum, Italy Duration: 22 Oct 2023 → 25 Oct 2023

Publication series

Name	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
ISSN (Electronic)	2473-0718

Conference

Conference	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Country/Territory	Italy
City	Paestum
Period	22/10/23 → 25/10/23

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10.1109/NMDC57951.2023.10343913Licence: All Rights Reserved

https://eprints.gla.ac.uk/319899/
https://ieeexplore.ieee.org/abstract/document/10343913Licence: All Rights Reserved

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Kumar, N., Dixit, A., Rezaei, A., Dutta, T., García, C. P., & Georgiev, V. (2023). Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 (pp. 617-620). (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NMDC57951.2023.10343913

Kumar, Naveen ; Dixit, Ankit ; Rezaei, Ali et al. / Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers, 2023. pp. 617-620 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

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title = "Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications",

abstract = "Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.",

author = "Naveen Kumar and Ankit Dixit and Ali Rezaei and Tapas Dutta and Garc{\'i}a, {C{\'e}sar Pascual} and Vihar Georgiev",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ; Conference date: 22-10-2023 Through 25-10-2023",

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Kumar, N, Dixit, A, Rezaei, A, Dutta, T, García, CP & Georgiev, V 2023, Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. in 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Institute of Electrical and Electronics Engineers, pp. 617-620, 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Paestum, Italy, 22/10/23. https://doi.org/10.1109/NMDC57951.2023.10343913

Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. / Kumar, Naveen; Dixit, Ankit; Rezaei, Ali et al.
2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers, 2023. p. 617-620 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

AU - Kumar, Naveen

AU - Dixit, Ankit

AU - Rezaei, Ali

AU - Dutta, Tapas

AU - García, César Pascual

AU - Georgiev, Vihar

PY - 2023/12/12

Y1 - 2023/12/12

N2 - Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

AB - Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

U2 - 10.1109/NMDC57951.2023.10343913

DO - 10.1109/NMDC57951.2023.10343913

M3 - Conference contribution

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T3 - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

SP - 617

EP - 620

BT - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

PB - Institute of Electrical and Electronics Engineers

T2 - 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Y2 - 22 October 2023 through 25 October 2023

ER -

Kumar N, Dixit A, Rezaei A, Dutta T, García CP, Georgiev V. Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers. 2023. p. 617-620. (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). doi: 10.1109/NMDC57951.2023.10343913

Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

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