Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

Naveen Kumar*, Ankit Dixit, Ali Rezaei, Tapas Dutta, César Pascual García, Vihar Georgiev

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

Original languageEnglish
Title of host publication2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
PublisherIEEE
Pages617-620
Number of pages4
ISBN (Electronic)9798350335460
DOIs
Publication statusPublished - 12 Dec 2023
Event18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 - Paestum, Italy
Duration: 22 Oct 202325 Oct 2023

Publication series

Name2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
ISSN (Electronic)2473-0718

Conference

Conference18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Country/TerritoryItaly
CityPaestum
Period22/10/2325/10/23

Fingerprint

Dive into the research topics of 'Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications'. Together they form a unique fingerprint.

Cite this