Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability

Sebastian Neira; Ross Mathieson; Mason Parker; Paul D. Judge; Stephen J. Finney

doi:10.23919/EPE23ECCEEurope58414.2023.10264534

Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability

Sebastian Neira, Ross Mathieson, Mason Parker, Paul D. Judge, Stephen J. Finney

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC) modules, using a gate-driver capable of implementing sub-nanosecond delays between gate signals. The gate-driver is implemented with a central control unit complemented with programmable digital buffers to achieve a time-skew resolution of 0.5 ns. Results show the time resolution required to balance the current distribution in an experimental setup with four 1200 V/400 A SiC modules in parallel. Additionally, the potential of having a thermal runaway due to the current imbalance is analysed using the programmable delays to test the switch of the modules at temperatures up to 105°C.

Original language	English
Title of host publication	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-8
Number of pages	8
ISBN (Print)	979-8-3503-1678-0
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264534
Publication status	Published - 2 Oct 2023
Event	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023

Conference

Conference	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Period	4/09/23 → 8/09/23

Keywords / Materials (for Non-textual outputs)

MOSFET
Silicon carbide
Photonic band gap
Europe
Switches
Logic gates
Current distribution

Access to Document

10.23919/EPE23ECCEEurope58414.2023.10264534

Cite this

Neira, S., Mathieson, R., Parker, M., Judge, P. D., & Finney, S. J. (2023). Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability. In 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (pp. 1-8). Article 10264534 Institute of Electrical and Electronics Engineers. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264534

@inproceedings{bf0ef010a9744306837b536bebdc1093,

title = "Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability",

abstract = "This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC) modules, using a gate-driver capable of implementing sub-nanosecond delays between gate signals. The gate-driver is implemented with a central control unit complemented with programmable digital buffers to achieve a time-skew resolution of 0.5 ns. Results show the time resolution required to balance the current distribution in an experimental setup with four 1200 V/400 A SiC modules in parallel. Additionally, the potential of having a thermal runaway due to the current imbalance is analysed using the programmable delays to test the switch of the modules at temperatures up to 105°C.",

keywords = "MOSFET, Silicon carbide, Photonic band gap, Europe, Switches, Logic gates, Current distribution",

author = "Sebastian Neira and Ross Mathieson and Mason Parker and Judge, {Paul D.} and Finney, {Stephen J.}",

year = "2023",

month = oct,

day = "2",

doi = "10.23919/EPE23ECCEEurope58414.2023.10264534",

language = "English",

isbn = "979-8-3503-1678-0",

pages = "1--8",

booktitle = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)",

publisher = "Institute of Electrical and Electronics Engineers",

note = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) ; Conference date: 04-09-2023 Through 08-09-2023",

}

Neira, S, Mathieson, R, Parker, M, Judge, PD & Finney, SJ 2023, Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability. in 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)., 10264534, Institute of Electrical and Electronics Engineers, pp. 1-8, 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), 4/09/23. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264534

Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability. / Neira, Sebastian; Mathieson, Ross; Parker, Mason et al.
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe). Institute of Electrical and Electronics Engineers, 2023. p. 1-8 10264534.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability

AU - Neira, Sebastian

AU - Mathieson, Ross

AU - Parker, Mason

AU - Judge, Paul D.

AU - Finney, Stephen J.

PY - 2023/10/2

Y1 - 2023/10/2

N2 - This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC) modules, using a gate-driver capable of implementing sub-nanosecond delays between gate signals. The gate-driver is implemented with a central control unit complemented with programmable digital buffers to achieve a time-skew resolution of 0.5 ns. Results show the time resolution required to balance the current distribution in an experimental setup with four 1200 V/400 A SiC modules in parallel. Additionally, the potential of having a thermal runaway due to the current imbalance is analysed using the programmable delays to test the switch of the modules at temperatures up to 105°C.

AB - This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC) modules, using a gate-driver capable of implementing sub-nanosecond delays between gate signals. The gate-driver is implemented with a central control unit complemented with programmable digital buffers to achieve a time-skew resolution of 0.5 ns. Results show the time resolution required to balance the current distribution in an experimental setup with four 1200 V/400 A SiC modules in parallel. Additionally, the potential of having a thermal runaway due to the current imbalance is analysed using the programmable delays to test the switch of the modules at temperatures up to 105°C.

KW - MOSFET

KW - Silicon carbide

KW - Photonic band gap

KW - Europe

KW - Switches

KW - Logic gates

KW - Current distribution

U2 - 10.23919/EPE23ECCEEurope58414.2023.10264534

DO - 10.23919/EPE23ECCEEurope58414.2023.10264534

M3 - Conference contribution

SN - 979-8-3503-1678-0

SP - 1

EP - 8

BT - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

PB - Institute of Electrical and Electronics Engineers

T2 - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

Y2 - 4 September 2023 through 8 September 2023

ER -

Neira S, Mathieson R, Parker M, Judge PD , Finney SJ. Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability. In 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe). Institute of Electrical and Electronics Engineers. 2023. p. 1-8. 10264534 doi: 10.23919/EPE23ECCEEurope58414.2023.10264534

Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability

Abstract / Description of output

Conference

Keywords / Materials (for Non-textual outputs)

Access to Document

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Cite this